Flat band voltage control on low Vt metal-gate/high-κ CMOSFETs with small EOT

被引：4

作者：

Chin, Albert ^{[1
]}

Chang, M. F. ^{[2
,3
]}

Lin, S. H. ^{[4
]}

Chen, W. B. ^{[1
]}

Lee, P. T. ^{[2
,3
]}

Yeh, F. S. ^{[4
]}

Liao, C. C. ^{[5
]}

Li, M. -F. ^{[5
,6
]}

Su, N. C. ^{[7
]}

Wang, S. J. ^{[7
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu, Taiwan

[3] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu, Taiwan

[4] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu, Taiwan

[5] Fudan Univ, Microelect Dept, Shanghai 200433, Peoples R China

[6] Natl Univ Singapore, ECE Dept, SNDL, Singapore 117548, Singapore

[7] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

来源：

MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 7-9期

关键词：

High-kappa; Metal-gate; CMOs; V-fb roll-off; EOT; GATE TRANSISTORS; LOGIC TECHNOLOGY;

D O I：

10.1016/j.mee.2009.03.075

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The unwanted high threshold voltage (V-t) is the major challenge for metal-gate/high-kappa CMOs especially at small equivalent-oxide-thickness (EOT). We have investigated the high V-t issue that is due to flat-band voltage (V-fb) roll-off at smaller EOT. A mechanism of charged oxygen vacancies formed by interface reaction was proposed to explain the V-fb roll-off effect. This interface reaction can be decreased by inserting a thin interfacial SiON and using novel low temperature process. The self-aligned and gate-first metal-gate/high-kappa CMCSFETs using these methods have achieved low V-t and good control of V-fb roll-off at small 0.6-1.2 nm EOT. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved,

引用

页码：1728 / 1732

页数：5

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