Angle-resolved study of hydrogen abstraction on Si(100) and Si(111):: Evidence for non-activated pathways

被引：12

作者：

Bisson, R. ^{[1
]}

Philippe, L. ^{[1
]}

Chatelet, M. ^{[1
]}

机构：

[1] Ecole Polytech, CNRS, Lab PICM, F-91128 Palaiseau, France

来源：

SURFACE SCIENCE | 2006年 / 600卷 / 19期

关键词：

molecule-solid scattering and diffraction - inelastic; atom-solid reactions; surface chemical reaction; single crystal surfaces; abstraction; hot-atom; collision induced desorption; hydrogen atom; silicon;

D O I：

10.1016/j.susc.2006.07.010

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The abstraction of chemisorbed hydrogen on Si(l 00) and Si(l 11) induced by atomic hydrogen has been investigated by studying with a rotatable mass spectrometer the angle-resolved molecular hydrogen desorption from a Si surface exposed to a chopped beam of atomic hydrogen. The angular distributions of desorbing molecules can be fitted independent of the surface temperature and the surface reconstruction by a cos(n)theta function with n < 1 for Si(100) and Si(111). These results are interpreted by non-activated pathways involving site-specific hot-atom abstraction on two adjacent silicon atoms with one having a dangling bond. Possible mechanisms according to the surface reconstructions are discussed. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：4454 / 4463

页数：10

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