A CMOS-MEMS RF-Tunable Bandpass Filter Based on Two High-Q 22-MHz Polysilicon Clamped-Clamped Beam Resonators

被引：62

作者：

Lluis Lopez, Joan ^{[1
]}

Verd, Jaume ^{[2
]}

Uranga, Arantxa ^{[1
]}

Giner, Joan ^{[1
]}

Murillo, Gonzalo ^{[1
]}

Torres, Francesc ^{[1
]}

Abadal, Gabriel ^{[1
]}

Barniol, Nuria ^{[1
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain

[2] Univ Illes Balears, Dept Phys, Elect Syst Grp, Palma de Mallorca 07122, Spain

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 07期

关键词：

Bandpass filter; CMOS-MEMS; micromechanical filter; system-on-chip;

D O I：

10.1109/LED.2009.2022509

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents the design, fabrication, and demonstration of a CMOS-MEMS filter based on two high-Q submicrometer-scale clamped-clamped beam resonators with resonance frequency around 22 MHz. The MEMS resonators are fabricated with a 0.35-mu m CMOS process and monolithically integrated with an on-chip differential amplifier. The CMOS-MEMS resonator shows high-quality factors of 227 in air conditions and 4400 in a vacuum for a bias voltage of 5 V. In air conditions, the CMOS-MEMS parallel filter presents a programmable bandwidth from 100 to 200 kHz with a < 1-dB ripple. In a vacuum, the filter presents a stop-band attenuation of 37 dB and a shape factor as low as 2.5 for a CMOS-compatible bias voltage of 5 V, demonstrating competitive performance compared with the state of the art of not fully integrated MEMS filters.

引用

页码：718 / 720

页数：3

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