Dielectric relaxation and localized electron hopping in colossal dielectric (Nb,In)-doped TiO2 rutile nanoceramics

被引:49
作者
Tsuji, Kosuke [1 ]
Han, HyukSu [2 ,3 ]
Guillemet-Fritsch, Sophie [3 ]
Randall, Clive A. [1 ]
机构
[1] Penn State Univ, Ctr Dielectr & Piezoelect, Mat Res Inst, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[2] Korea Inst Ind Technol, Gwahakdanji Ro 137-41, Gangwon Do 25440, South Korea
[3] Univ Toulouse, UPS, CNRS, CIRIMAT,INP, 118 Route Narbonne, F-31062 Toulouse 9, France
基金
美国国家科学基金会;
关键词
GIANT PERMITTIVITY; SINGLE-CRYSTAL; PLUS NB; CERAMICS; PERFORMANCE; CONDUCTION; BEHAVIOR; BATIO3;
D O I
10.1039/c7cp00042a
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Dielectric spectroscopy was performed on a Nb and In co-doped rutile TiO2 nano-crystalline ceramic (n-NITO) synthesized by a low-temperature spark plasma sintering (SPS) technique. The dielectric properties of the n-NITO were not largely affected by the metal electrode contacts. Huge dielectric relaxation was observed at a very low temperature below 35 K. Both the activation energy and relaxation time suggested that the electronic hopping motion is the underlying mechanism responsible for the colossal dielectric permittivity (CP) and its relaxation, instead of the internal barrier layer effect or a dipolar relaxation. With Havriliak-Negami (H-N) fitting, a relaxation time with a large distribution of dielectric relaxations was revealed. The broad distributed relaxation phenomena indicated that Nb and In were involved, controlling the dielectric relaxation by modifying the polarization mechanism and localized states. The associated distribution function is calculated and presented. The frequency-dependent a.c. conductance is successfully explained by a hopping conduction model of the localized electrons with the distribution function. It is demonstrated that the dielectric relaxation is strongly correlated with the hopping electrons in the localized states. The CP in SPS n-NITO is then ascribed to a hopping polarization.
引用
收藏
页码:8568 / 8574
页数:7
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