Advances in Silicon Photonics Segmented Electrode Mach-Zehnder Modulators and Peaking Enhanced Resonant Devices

被引：21

作者：

Azadeh, S. Sharif ^{[1
]}

Mueller, J. ^{[1
]}

Merget, F. ^{[1
]}

Romero-Garcia, S. ^{[1
]}

Shen, B. ^{[1
]}

Witzens, J. ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, Integrated Photon Lab, Sommerfeldstr 24, D-52074 Aachen, Germany

来源：

PHOTONICS NORTH 2014 | 2014年 / 9288卷

关键词：

Electro-Optical Modulation; Silicon Photonics; Integrated Optics; Optical Interconnects; HIGH-SPEED;

D O I：

10.1117/12.2075836

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report recent progress made in our laboratory on travelling wave Mach-Zehnder Interferometer based Silicon Photonics modulators with segmented transmission lines, as well as on resonant ring modulators and add-drop multiplexers with peaking enhanced bandwidth extended beyond the photon lifetime limit. In our segmented transmission lines, microstructuring of the electrodes results in radio-frequency modes significantly deviating from the transverse electromagnetic (TEM) condition and allows for additional design freedom to jointly achieve phase matching, impedance matching and minimizing resistive losses. This technique was found to be particularly useful to achieve the aforementioned objectives in simple back-end processes with one or two metallization layers. Peaking results from intrinsic time dynamics in ring resonator based modulators and add-drop multiplexers and allows extending the bandwidth of the devices beyond the limit predicted from the photon lifetime. Simple closed form expressions allow incorporating peaking into system level modeling.

引用

页数：15

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