Improving the growth of electron-doped Pr2-xCexCuO4+δ thin films made by pulsed-laser deposition using excess CuO

被引：19

作者：

Roberge, G. ^{[2
]}

Charpentier, S. ^{[2
]}

Godin-Proulx, S. ^{[2
]}

Rauwel, P. ^{[1
]}

Truong, K. D. ^{[2
]}

Fournier, P. ^{[2
]}

机构：

[1] Univ Aveiro, DECV CICECO, P-3810193 Aveiro, Portugal

[2] Univ Sherbrooke, Dept Phys, Regroupement Quebecois Mat Pointe, Sherbrooke, PQ J1K 2R1, Canada

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 05期

基金：

加拿大自然科学与工程研究理事会;

关键词：

Defects; Purification; Phase equilibria; Pulsed-laser ablation epitaxy; Cuprates; Electron-doped high-T-c superconductors; CRYSTAL NEUTRON-DIFFRACTION; TRANSPORT-PROPERTIES; OXYGEN; SUPERCONDUCTIVITY;

D O I：

10.1016/j.jcrysgro.2009.01.017

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on a major improvement in the growth of electron-doped cuprate thin films by pulsed-laser deposition (PLD). Using Cu-rich targets, we affect the stability of secondary phases relative to Pr2-xCexCuO4+delta (PCCO). The resulting new generation of PLD PCCO epitaxial thin films shows no trace of the parasitic phases and resistivity lower than the old generation of thin films and comparable to the best films made by molecular-beam epitaxy. The absence of the intercalated phases even after reduction suggests that Cu migration is not required to induce superconductivity in our defect-free films. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1340 / 1345

页数：6

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