Ultrafast heavy hole-phonon scattering in highly n-doped GaAs

被引：5

作者：

Lin, WZ ^{[1
]}

Huang, C ^{[1
]}

Zhang, HC ^{[1
]}

Wen, JH ^{[1
]}

Guo, B ^{[1
]}

Lai, TS ^{[1
]}

机构：

[1] Zhongshan Univ, State Key Lab Ultrafast Laser Spect, Dept Phys, Guangzhou 510275, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 1999年 / 16卷 / 10期

关键词：

D O I：

10.1088/0256-307X/16/10/021

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ultrafast heavy hole-phonon interactions in highly n-doped GaAs have been selectively studied with femtosecond absorption saturation measurements by tuning the pump-probe photon energy just above the doped electron Fermi edge. A. heavy hole-phonon scattering time of similar to 300fs has been measured, which is consistent with that calculated by a numerical model. Accordingly, an optical deformation potential of about 31 eV has been estimated for this highly n-doped sample.

引用

页码：758 / 760

页数：3

共 13 条

[1] SCATTERING RATES FOR HOLES NEAR THE VALENCE-BAND EDGE IN SEMICONDUCTORS [J].

BRUDEVOLL, T ;

FJELDLY, TA ;

BAEK, J ;

SHUR, MS .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (12) :7373-7382

[2] FEMTOSECOND RELAXATION OF PHOTOEXCITED HOLES IN BULK GALLIUM-ARSENIDE [J].

CHEBIRA, A ;

CHESNOY, J ;

GALE, GM .

PHYSICAL REVIEW B, 1992, 46 (08) :4559-4563

[3] SCREENING AND EXCHANGE IN THE THEORY OF THE FEMTOSECOND KINETICS OF THE ELECTRON-HOLE PLASMA [J].

COLLET, JH .

PHYSICAL REVIEW B, 1993, 47 (16) :10279-10291

[4] Ultrafast hole-phonon interactions in GaAs [J].

Del Fatti, N ;

Langot, P ;

Tommasi, R ;

Vallee, F .

APPLIED PHYSICS LETTERS, 1997, 71 (01) :75-77

[5] Ultrafast dynamics of holes in GaAs probed by two-color femtosecond spectroscopy [J].

Ganikhanov, F ;

Burr, KC ;

Tang, CL .

APPLIED PHYSICS LETTERS, 1998, 73 (01) :64-66

[6] FEMTOSECOND CARRIER THERMALIZATION IN DENSE FERMI SEAS [J].

KNOX, WH ;

CHEMLA, DS ;

LIVESCU, G ;

CUNNINGHAM, JE ;

HENRY, JE .

PHYSICAL REVIEW LETTERS, 1988, 61 (11) :1290-1293

[7] Charge states of DX centers and electronic Raman scattering in n-Ga1-xAlxAs [J].

Lian, SY .

CHINESE PHYSICS LETTERS, 1998, 15 (02) :125-127

[8] FEMTOSECOND ABSORPTION SATURATION STUDIES OF HOT CARRIERS IN GAAS AND ALGAAS [J].

LIN, WZ ;

SCHOENLEIN, RW ;

FUJIMOTO, JG ;

IPPEN, EP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (02) :267-275

[9] Perimeter effects on heavy doping GaAs diodes [J].

Shi, XZ ;

Wang, L ;

Xia, GQ .

CHINESE PHYSICS LETTERS, 1998, 15 (05) :370-372

[10]

SHUH J, 1987, PHYS REV LETT, V59, P2222

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