Temperature dependence of conductance in NiO-based resistive switching memory showing two modes in the forming process

被引：16

作者：

Sasakura, Hiroki ^{[1
]}

Nishi, Yusuke ^{[1
]}

Kimoto, Tsunenobu ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 23期

关键词：

RESET MECHANISM;

D O I：

10.1063/1.4937490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two modes were observed in the forming process in a resistive switching cell based on NiO deposited by radio-frequency reactive sputtering. After semi-forming, the first step of the forming, the conductance of the cell exhibited several discrete values characterized by integer n multiples of the quantized conductance G(0). n was 1 just after semi-forming and increased depending on the applied voltage. Nonpolar-type resistive switching behaviors were confirmed after both the first and the second step of the forming. We investigated temperature dependence of conductance in several states, the structural properties and oxygen composition in NiO, and a model for resistive switching phenomena was discussed. (C) 2015 AIP Publishing LLC.

引用

页数：4

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