Application of glycine containing solutions for electroless deposition of Co-P and Co-W-P films and their behavior as barrier layers

被引：17

作者：

Tarozaite, Rima ^{[1
]}

Sukackiene, Zita ^{[1
]}

Sudavicius, Aloyzas ^{[1
]}

Juskenas, Remigijus ^{[1
]}

Selskis, Algirdas ^{[1
]}

Jagminiene, Aldona ^{[1
]}

Norkus, Eugenijus ^{[1
]}

机构：

[1] Inst Chem, LT-01108 Vilnius, Lithuania

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2009年 / 117卷 / 01期

关键词：

Electroless deposition; Cobalt; Tungsten; Glycine; Dicarboxylic acids; Barrier layer; DIFFUSION-BARRIERS; THIN-FILM; COPPER METALLIZATION; MICROSTRUCTURE; ACID; ULSI;

D O I：

10.1016/j.matchemphys.2009.05.016

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Co-P and Co-W-P alloy films were deposited by the electroless plating method on Cu foil or on Cu deposited by sputtering on a Ta/SiO2/Si/substrate. Dicarboxylic acids, used as buffering additives, increase the deposition rate and P quantity in the films. The cobalt deposition rate and P quantity in the films decrease with incorporation of tungsten into the films. AFM, XRD and XPS data indicate the differences between the structure of Co-P and Co-W-P films and confirm that Co-W-P films deposited from glycine containing solutions can serve as a perfect diffusion barrier layer to prevent Cu diffusion. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：117 / 124

页数：8

共 20 条

[11] Evaluation of electroless deposited Co(W,P) thin films as diffusion barriers for copper metallization [J].