Ammonia: A source of hydrogen dopant for InN layers grown by metal organic vapor phase epitaxy

被引：18
|
作者：
Ruffenach, S. [1 ]
Moret, M. [1 ]
Briot, O. [1 ]
Gil, B. [1 ]
机构：
[1] Univ Montpellier 2, CNRS, UMR 5650, Etud Semicond Grp, F-34095 Montpellier, France
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 04期
关键词：
annealing; hydrogen; III-V semiconductors; indium compounds; MOCVD; semiconductor doping; semiconductor epitaxial layers; vapour phase epitaxial growth; NITRIDE;
D O I：
10.1063/1.3189212
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thermal annealing of InN layers grown by metal organic vapor phase epitaxy (MOVPE) is investigated in nitrogen atmosphere for temperatures ranging from 400 to 550 degrees C and for heat treatment times up to 12 h. This treatment results in hydrogen outdiffusion, lowering significantly the residual n-type background doping. This mechanism is shown to be reversible through thermal annealing under ammonia atmosphere, responsible of hydrogen incorporation during growth. These results establish a MOVPE process allowing the obtention of InN samples, which exhibit similar electrical properties than molecular beam epitaxy grown samples: a key issue in view of future industrial production of InN based devices.
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页数：3
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