Ammonia: A source of hydrogen dopant for InN layers grown by metal organic vapor phase epitaxy

被引：18

作者：

Ruffenach, S. ^{[1
]}

Moret, M. ^{[1
]}

Briot, O. ^{[1
]}

Gil, B. ^{[1
]}

机构：

[1] Univ Montpellier 2, CNRS, UMR 5650, Etud Semicond Grp, F-34095 Montpellier, France

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 04期

关键词：

annealing; hydrogen; III-V semiconductors; indium compounds; MOCVD; semiconductor doping; semiconductor epitaxial layers; vapour phase epitaxial growth; NITRIDE;

D O I：

10.1063/1.3189212

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermal annealing of InN layers grown by metal organic vapor phase epitaxy (MOVPE) is investigated in nitrogen atmosphere for temperatures ranging from 400 to 550 degrees C and for heat treatment times up to 12 h. This treatment results in hydrogen outdiffusion, lowering significantly the residual n-type background doping. This mechanism is shown to be reversible through thermal annealing under ammonia atmosphere, responsible of hydrogen incorporation during growth. These results establish a MOVPE process allowing the obtention of InN samples, which exhibit similar electrical properties than molecular beam epitaxy grown samples: a key issue in view of future industrial production of InN based devices.

引用

页数：3

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