Rapid enlargement of SiC single crystal using a cone-shaped platform

被引：21

作者：

Bahng, W

Kitou, Y

Nishizawa, S

Yamaguchi, H

Khan, MN

Oyanagi, N

Nishino, S

Arai, K

机构：

[1] Ultra Low Loss Power Device Technol Res Body UPR, R&D Assoc Future Electron Devices FED, Tsukuba, Ibaraki 3058568, Japan

[2] Ultra Low Loss Power Device Technol Res Body UPR, Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

[3] Kyoto Inst Technol, UPR, Sakyo Ku, Kyoto 6068585, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 04期

关键词：

silicon carbide; sublimation growth; cone-shaped platform; rapid enlargement;

D O I：

10.1016/S0022-0248(99)00754-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigated the enlargement of SiC single crystal during physical vapor transport growth by modifying the shape of graphite lid. The single crystals grown on the cone-shaped platform were larger in diameter than those grown on the conventional one. The enlargement of ingot is discussed in terms of the dual role of polycrystals during crystal growth: (i) it provides a platform for single crystal and (ii) an obstacle to the lateral growth of ingot. The dependence of the broadening angle (beta) of single crystal on the taper angle (theta) of the cone-shaped platform was also investigated and an optimum angle at a given growth condition found. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：767 / 772

页数：6

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