Ultrafast Excitonic Behavior in Two-Dimensional Metal- Semiconductor Heterostructure

被引：29

作者：

Seo, Deok Min ^{[1
]}

Lee, Jeong-Hwan ^{[1
]}

Lee, Suryeon ^{[1
]}

Seo, Juyeon ^{[1
]}

Park, Changkyoo ^{[2
]}

Nam, Jaewook ^{[3
]}

Park, Yeonju ^{[4
]}

Jin, Sila ^{[4
]}

Srivastava, Shubhda ^{[5
,10
]}

Kumar, Mahesh ^{[5
]}

Jung, Young Mee ^{[4
]}

Lee, Kyu-Hwan ^{[6
]}

Kim, Yoon-Jun ^{[2
]}

Yoon, Sangwoom ^{[7
]}

Kim, Young Lae ^{[8
]}

Ajayan, Pulickel M. ^{[9
]}

Gupta, Bipin Kumar ^{[5
]}

Hahm, Myung Gwan ^{[2
]}

机构：

[1] Inha Univ, Dept Mat Sci & Engn, Incheon 22212, South Korea

[2] Korea Inst Machinery & Mat, Laser & Electron Beam Applicat Dept, Daejeon 34103, South Korea

[3] Seoul Natl Univ, Sch Chem & Biol Engn, Seoul 08826, South Korea

[4] Kangwon Natl Univ, Dept Chem, Chunchon 24341, South Korea

[5] CSIR Natl Phys Lab, New Delhi 110012, India

[6] KIMS, Dept Electrochem, Surface Technol Div, Changwon Si 51508, Gyeongsangnam D, South Korea

[7] Chung Ang Univ, Dept Chem, Seoul 06974, South Korea

[8] Gangneung Wonju Natl Univ, Dept Elect Engn, Kangnung 25457, South Korea

[9] Rice Univ, Dept Mat Sci & NanoEngn, Houston, TX 77005 USA

[10] Acad Sci & Innovat Res AcSIR, CSIR Natl Phys Lab Campus, New Delhi 110012, India

来源：

ACS PHOTONICS | 2019年 / 6卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

transition metal dichalcogenides; two-dimensional materials; 2D van der Waals heterostructure; ultrafast spectroscopy; exciton; metal-semiconductor heterostructure; excited-state absorption; ELECTRONIC-STRUCTURE; MOS2; MONOLAYER; CONTACTS; DICHALCOGENIDES; RECOMBINATION; LIFETIMES; CHEMISTRY; ORIGIN; WSE2;

D O I：

10.1021/acsphotonics.9b00399

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The excitonic behavior in two-dimensional (2D) heterostructures of transition metal dichalcogenide atomic layers has attracted much attention. Here, we report, for the first time, the ultrafast behavior of charge carriers in heterostructure of metal (NbSe2) and semiconductor (WSe2) atomic layers via ultrafast spectroscopy. We observe a blue-shift of the excitedstate absorption peak in time-resolved absorption spectra with time delays in both the as-grown semiconducting WSe2 and the metal-semiconductor heterostructure. However, the heterostructure shows a clear difference in the peak position and relaxation time of its electrons. This result indicates higher excited energy states in WSe2 in the presence of the NbSe2 metallic layer contact and implies the existence of interlayer electron quenching from WSe2 to NbSe2 layers. The heterostructure shows a shorter time scale in the peak rise time compared to bare WSe2, due to interfacial defects between WSe2 and NbSe2 layers. The results offer a better understanding of the optoelectronic properties of 2D heterostructure interfaces.

引用

页码：1379 / 1386

页数：15

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