Blue photoluminescence from nanocrystalline porous silicon structure fabricated by high-current pulsed electron beam irradiation

被引：1

作者：

Lu, Peng ^{[1
]}

Wang, Xiao-Tong ^{[1
]}

Yang, Sheng-Zhi ^{[1
]}

Li, Yan ^{[1
]}

Hou, Xiu-Li ^{[1
]}

Guan, Qing-Feng ^{[1
]}

机构：

[1] Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Peoples R China

来源：

CHINESE SCIENCE BULLETIN | 2014年 / 59卷 / 34期

基金：

中国国家自然科学基金;

关键词：

High-current pulsed electron beam; Porous Si; Si nanocrystals; Photoluminescence; SURFACE; LUMINESCENCE; AIR;

D O I：

10.1007/s11434-014-0561-6

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

N-type Si (111) wafers have been processed by high-current pulsed electron beam (HCPEB) treatment with an increasing number of irradiation (1, 10 and 20 pulses). The results of this work show that a highly porous nanostructure was formed after irradiation. Moreover, the high-density Si nanocrystals (Si-ncs) about 3 nm were distributed on the surface of Si wafers and exhibited 3.02 eV Photoluminescence (PL) emission in blue band. The PL intensity increases with the increase in the Si-ncs' density in accordance with the quantum confinement model, which can be ascribed to the different pulse time of HCPEB treatment. The possible formation mechanisms of micropores and Si-ncs are discussed.

引用

页码：4758 / 4762

页数：5

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