Blue photoluminescence from nanocrystalline porous silicon structure fabricated by high-current pulsed electron beam irradiation

被引:1
作者
Lu, Peng [1 ]
Wang, Xiao-Tong [1 ]
Yang, Sheng-Zhi [1 ]
Li, Yan [1 ]
Hou, Xiu-Li [1 ]
Guan, Qing-Feng [1 ]
机构
[1] Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Peoples R China
来源
CHINESE SCIENCE BULLETIN | 2014年 / 59卷 / 34期
基金
中国国家自然科学基金;
关键词
High-current pulsed electron beam; Porous Si; Si nanocrystals; Photoluminescence; SURFACE; LUMINESCENCE; AIR;
D O I
10.1007/s11434-014-0561-6
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
N-type Si (111) wafers have been processed by high-current pulsed electron beam (HCPEB) treatment with an increasing number of irradiation (1, 10 and 20 pulses). The results of this work show that a highly porous nanostructure was formed after irradiation. Moreover, the high-density Si nanocrystals (Si-ncs) about 3 nm were distributed on the surface of Si wafers and exhibited 3.02 eV Photoluminescence (PL) emission in blue band. The PL intensity increases with the increase in the Si-ncs' density in accordance with the quantum confinement model, which can be ascribed to the different pulse time of HCPEB treatment. The possible formation mechanisms of micropores and Si-ncs are discussed.
引用
收藏
页码:4758 / 4762
页数:5
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