Blue photoluminescence from nanocrystalline porous silicon structure fabricated by high-current pulsed electron beam irradiation

被引：1

作者：

Lu, Peng ^{[1
]}

Wang, Xiao-Tong ^{[1
]}

Yang, Sheng-Zhi ^{[1
]}

Li, Yan ^{[1
]}

Hou, Xiu-Li ^{[1
]}

Guan, Qing-Feng ^{[1
]}

机构：

[1] Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Peoples R China

来源：

CHINESE SCIENCE BULLETIN | 2014年 / 59卷 / 34期

基金：

中国国家自然科学基金;

关键词：

High-current pulsed electron beam; Porous Si; Si nanocrystals; Photoluminescence; SURFACE; LUMINESCENCE; AIR;

D O I：

10.1007/s11434-014-0561-6

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

N-type Si (111) wafers have been processed by high-current pulsed electron beam (HCPEB) treatment with an increasing number of irradiation (1, 10 and 20 pulses). The results of this work show that a highly porous nanostructure was formed after irradiation. Moreover, the high-density Si nanocrystals (Si-ncs) about 3 nm were distributed on the surface of Si wafers and exhibited 3.02 eV Photoluminescence (PL) emission in blue band. The PL intensity increases with the increase in the Si-ncs' density in accordance with the quantum confinement model, which can be ascribed to the different pulse time of HCPEB treatment. The possible formation mechanisms of micropores and Si-ncs are discussed.

引用

页码：4758 / 4762

页数：5

共 17 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[2] VISIBLE-LIGHT EMISSION DUE TO QUANTUM SIZE EFFECTS IN HIGHLY POROUS CRYSTALLINE SILICON [J].

CULLIS, AG ;

CANHAM, LT .

NATURE, 1991, 353 (6342) :335-338

[3] Surface nanostructure and amorphous state of a low carbon steel induced by high-current pulsed electron beam [J].

Guan, QF ;

Zou, H ;

Zou, GT ;

Wu, AM ;

Hao, SZ ;

Zou, JX ;

Qin, Y ;

Dong, C ;

Zhang, QY .

SURFACE & COATINGS TECHNOLOGY, 2005, 196 (1-3) :145-149

[4] Fabrication of Micropore on AISI 304L Austenitic Stainless Steel Surface by High-current Pulsed Electron Beams Irradiation [J].

Guan, Qingfeng ;

Wang, Xuetao ;

Zhu, Jian ;

Chen, Kangmin ;

Liang, Liang ;

Zhang, Qingyu ;

Dong, Chuang .

ISIJ INTERNATIONAL, 2009, 49 (09) :1449-1451

[5] Laser-induced treatment of silicon in air and formation of Si/SiOx photoluminescent nanostructured layers [J].

Kabashin, AV ;

Meunier, M .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 101 (1-3) :60-64

[6] Visible photoluminescence from nanostructured Si-based layers produced by air optical breakdown on silicon [J].

Kabashin, AV ;

Meunier, M .

APPLIED PHYSICS LETTERS, 2003, 82 (10) :1619-1621

[7] Photoluminescence properties of silicon nanocrystals as a function of their size [J].

Ledoux, G ;

Guillois, O ;

Porterat, D ;

Reynaud, C ;

Huisken, F ;

Kohn, B ;

Paillard, V .

PHYSICAL REVIEW B, 2000, 62 (23) :15942-15951

[8] Formation and luminescent properties of face-centered-cubic Si nanocrystals in silica matrix by magnetron sputtering with substrate bias [J].

Lu, Y. W. ;

Du, X. W. ;

Sun, J. ;

Hu, S. L. ;

Han, X. ;

Li, H. .

APPLIED PHYSICS LETTERS, 2007, 90 (24)

[9] Colour-switching effect of photoluminescent silicon after spark-processing in oxygen [J].

Ludwig, MH ;

Augustin, A ;

Hummel, RE .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (08) :981-986

[10] Blue photoluminescent Si nanocrystals prepared by high-current pulsed electron beam irradiation [J].

Lv, Peng ;

Zhang, Zaiqiang ;

Wang, Xiaotong ;

Hou, Xiuli ;

Guan, Qingfeng .

RSC ADVANCES, 2013, 3 (39) :17998-18001

← 1 2 →