Importance of interface engineering for synthesis of SrHfO3 perovskite thin films on Si substrates through crystallization of amorphous films and control of flat-band voltages of metal-oxide-semiconductor capacitors

被引：5

作者：

Migita, Shinji ^{[1
]}

Morita, Yukinori ^{[1
]}

Masahara, Meishoku ^{[1
]}

Ota, Hiroyuki ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Collaborat Res Team Green Nanoelect Ctr, Tsukuba, Ibaraki 3058569, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 04期

基金：

日本学术振兴会;

关键词：

SILICON; SI(100); SRTIO3; SHIFT;

D O I：

10.7567/JJAP.53.04EA03

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the crystallization behavior of perovskite SrHfO3 films on Si substrates, which are a candidate for a new gate dielectric film of MOSFETs. It is found that the diffusion of Sr atoms into the Si substrate changes the chemical composition of the film and disturbs the formation of perovskite-type crystals. To overcome this situation, SiN film is demonstrated to be an effective barrier layer. Perovskite-type SrHfO3 crystals are obtained by annealing at higher than 800 degrees C. The interfacial silicate layer induces a negative flat-band voltage (VFB) shift in MOS capacitors. The importance of a terminating layer for the control of VFB is discussed by comparing with epitaxial perovskite-type crystals. (C) 2014 The Japan Society of Applied Physics

引用

页数：5

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