Strong Purcell effect for InAs quantum boxes in three-dimensional solid-state microcavities

被引：361

作者：

Gérard, JM ^{[1
]}

Gayral, B ^{[1
]}

机构：

[1] France Telecom, CNET, DTD, CDP, F-92220 Bagneux, France

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1999年 / 17卷 / 11期

关键词：

microresonators; photoluminescence; Q-factor; quantum dots; spontaneous emission;

D O I：

10.1109/50.802999

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A strong enhancement of the spontaneous emission rate (Purcell effect) has been observed for self-assembled InAs/GaAs quantum boxes inserted in GaAs-based pillar mi crocavities (x5) and microdisks (x15) using time-resolved as well as c.w. photoluminescence experiments. We show that the magnitude of the Purcell effect can be quantitatively understood by considering both the Purcell figure of merit F-p of such cavities (F-p much greater than 1) and the spatial/spectral distribution of the inhomogeneous collection of atom-like emitters. These results open the may to the development of single-photon devices such as photon-guns or photon-turnstiles, able to emit photons one-by-one in a deterministic way.

引用

页码：2089 / 2095

页数：7

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