The impact of strain on growth mode in chemical vapor deposited mono- and few-layer MoS2

被引:1
作者
Rommelfangen, Jonathan [1 ]
Reichardt, Sven [1 ]
Ben Chu, Van [1 ]
Wirtz, Ludger [1 ]
Dale, Phillip J. [1 ]
Redinger, Alex [1 ]
机构
[1] Univ Luxembourg, Dept Phys & Mat Sci, Luxembourg, England
关键词
MONOLAYER MOS2; PHOTOLUMINESCENCE; DIFFUSION;
D O I
10.1063/5.0087207
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The development of high-quality chemical vapor-deposited mono- and few-layer MoS2 is of high relevance for future applications in functional devices. Consequently, a detailed understanding of the growth mode and the parameters affecting it is important. Here, we show for the case of mono- and few-layer MoS2 grown on Muscovite mica, how strain and temperature impact the growth mode. We show how misleading the determination of the number of MoS2 layers is, solely based on Raman spectroscopy due to the occurrence of strain and changes in the growth mode. A combination of atomic force microscopy, Raman spectroscopy, and ab initio calculations reveal that that the growth at 500 degrees C synthesis temperature exhibits a strained layer-by-layer growth of up to three mono-layers, whereas at 700 degrees C, a strain release occurs and layer-by-layer growth is confined to the first mono-layer only. We relate the occurrence of strain to the formation of gas bubbles below the MoS2 film, escaping the mica sheets during high temperature synthesis. Our analysis shows that mica substrates can be used to study strain in 2D materials without the need to apply external stress and that a detailed knowledge of the MoS2 morphology is necessary to correctly interpret the Raman results. (C) 2022 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
引用
收藏
页数:7
相关论文
共 32 条
[1]   Tip-Enhanced Photoluminescence of Freestanding Lateral Heterobubbles [J].
Albagami, Abdullah ;
Ambardar, Sharad ;
Hrim, Hana ;
Sahoo, Prasana K. ;
Emirov, Yusuf ;
Gutierrez, Humberto R. ;
Voronine, Dmitri V. .
ACS APPLIED MATERIALS & INTERFACES, 2022, 14 (08) :11006-11015
[2]   Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials [J].
Bernardi, Marco ;
Palummo, Maurizia ;
Grossman, Jeffrey C. .
NANO LETTERS, 2013, 13 (08) :3664-3670
[3]   A roadmap for electronic grade 2D materials [J].
Briggs, Natalie ;
Subramanian, Shruti ;
Lin, Zhong ;
Li, Xufan ;
Zhang, Xiaotian ;
Zhang, Kehao ;
Xiao, Kai ;
Geohegan, David ;
Wallace, Robert ;
Chen, Long-Qing ;
Terrones, Mauricio ;
Ebrahimi, Aida ;
Das, Saptarshi ;
Redwing, Joan ;
Hinkle, Christopher ;
Momeni, Kasra ;
van Duin, Adri ;
Crespi, Vin ;
Kar, Swastik ;
Robinson, Joshua A. .
2D MATERIALS, 2019, 6 (02)
[4]   EFFECT OF STRAIN ON SURFACE-DIFFUSION AND NUCLEATION [J].
BRUNE, H ;
BROMANN, K ;
RODER, H ;
KERN, K ;
JACOBSEN, J ;
STOLTZE, P ;
JACOBSEN, K ;
NORSKOV, J .
PHYSICAL REVIEW B, 1995, 52 (20) :14380-14383
[5]   The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2 [J].
Buscema, Michele ;
Steele, Gary A. ;
van der Zant, Herre S. J. ;
Castellanos-Gomez, Andres .
NANO RESEARCH, 2014, 7 (04) :561-571
[6]   DEHYDRATION OF PHLOGOPITE MICAS STUDIED BY HIGH-TEMPERATURE TRANSMISSION ELECTRON MICROSCOPY [J].
CARTZ, L ;
TOOPER, B .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2783-&
[7]   Substrate-induced strain and charge doping in CVD-grown monolayer MoS2 [J].
Chae, Woo Hyun ;
Cain, Jeffrey D. ;
Hanson, Eve D. ;
Murthy, Akshay A. ;
Dravid, Vinayak P. .
APPLIED PHYSICS LETTERS, 2017, 111 (14)
[8]   Recent development of two-dimensional transition metal dichalcogenides and their applications [J].
Choi, Wonbong ;
Choudhary, Nitin ;
Han, Gang Hee ;
Park, Juhong ;
Akinwande, Deji ;
Lee, Young Hee .
MATERIALS TODAY, 2017, 20 (03) :116-130
[9]   Bandgap Engineering of Strained Monolayer and Bilayer MoS2 [J].
Conley, Hiram J. ;
Wang, Bin ;
Ziegler, Jed I. ;
Haglund, Richard F., Jr. ;
Pantelides, Sokrates T. ;
Bolotin, Kirill I. .
NANO LETTERS, 2013, 13 (08) :3626-3630
[10]   Advanced capabilities for materials modelling with QUANTUM ESPRESSO [J].
Giannozzi, P. ;
Andreussi, O. ;
Brumme, T. ;
Bunau, O. ;
Nardelli, M. Buongiorno ;
Calandra, M. ;
Car, R. ;
Cavazzoni, C. ;
Ceresoli, D. ;
Cococcioni, M. ;
Colonna, N. ;
Carnimeo, I. ;
Dal Corso, A. ;
de Gironcoli, S. ;
Delugas, P. ;
DiStasio, R. A., Jr. ;
Ferretti, A. ;
Floris, A. ;
Fratesi, G. ;
Fugallo, G. ;
Gebauer, R. ;
Gerstmann, U. ;
Giustino, F. ;
Gorni, T. ;
Jia, J. ;
Kawamura, M. ;
Ko, H-Y ;
Kokalj, A. ;
Kucukbenli, E. ;
Lazzeri, M. ;
Marsili, M. ;
Marzari, N. ;
Mauri, F. ;
Nguyen, N. L. ;
Nguyen, H-V ;
Otero-de-la-Roza, A. ;
Paulatto, L. ;
Ponce, S. ;
Rocca, D. ;
Sabatini, R. ;
Santra, B. ;
Schlipf, M. ;
Seitsonen, A. P. ;
Smogunov, A. ;
Timrov, I. ;
Thonhauser, T. ;
Umari, P. ;
Vast, N. ;
Wu, X. ;
Baroni, S. .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2017, 29 (46)