Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 μm

被引：8
作者：
Syperek, M. [1 ]
Andrzejewski, J. [1 ]
Rogowicz, E. [1 ]
Misiewicz, J. [1 ]
Bauer, S. [2 ]
Sichkovskyi, V. I. [2 ]
Reithmaier, J. P. [2 ]
Sek, G. [1 ]
机构：
[1] Wroclaw Univ Sci & Technol, Dept Expt Phys, Fac Fundamental Problems Technol, Lab Opt Spect Nanostruct, Wybreze Wyspianskiego 27, PL-50370 Wroclaw, Poland
[2] Univ Kassel, CINSaT, Inst Nanostruct Technol & Analyt INA, Heinrich Plett Str 40, D-34132 Kassel, Germany
来源：
APPLIED PHYSICS LETTERS | 2018年 / 112卷 / 22期
关键词：
ROOM-TEMPERATURE; LASERS; GAAS; INP;
D O I：
10.1063/1.5027596
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Carrier relaxation in self-assembled InAs/In0.53Ga0.23Al0.24As/InP(001) quantum dots emitting at 1.55 mu m and quantum dots coupled to the In0.64Ga0.36As/In0.53Ga0.23Al0.24As quantum well through a thin In0.53Ga0.23Al0.24As barrier is investigated employing high-temporal-resolution (< 0.3 ps), time-resolved spectroscopic techniques at cryogenic temperatures, supported additionally with photoluminescence, photoluminescence excitation, and theoretical modelling. We focused on intra-band carrier relaxation pathways that solely determine the observed non-equilibrium carrier population kinetics. We ascertained relatively fast carrier capture and intra-band relaxation process in a reference structure with quantum dots only (similar to 8 ps time constant) and even faster initial relaxation in the coupled system (similar to 4 ps). An evident bottleneck effect is observed for the final relaxation stage in the coupled quantum dots-quantum well system slowing down the overall relaxation process by a factor of 5. The effect is attributed to a peculiar picture of the confined conduction band states in the coupled system exhibiting significant changes in the spatial distribution between the relevant lowest-lying electronic states. Published by AIP Publishing.
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页数：5
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