Nitrogen function of aluminum-nitride codoped ZnO films deposited using cosputter system

被引：31

作者：

Lai, Li-Wen ^{[1
]}

Yan, Jheng-Tai ^{[1
]}

Chen, Chia-Hsun

Lou, Li-Ren ^{[1
]}

Lee, Ching-Ting ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan

来源：

JOURNAL OF MATERIALS RESEARCH | 2009年 / 24卷 / 07期

关键词：

P-TYPE ZNO; THIN-FILMS; PHOTOLUMINESCENCE; FABRICATION;

D O I：

10.1557/JMR.2009.0265

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

AIN codoped ZnO films were deposited on sapphire substrates at low temperature using a cosputter system under various N-2/(N-2 + Ar) flow ratios. To investigate the nitrogen function, the ratio of nitrogen ambient was varied during cosputtering. AIN codoped ZnO films with various crystallographic Structures and bonding configurations were measured. With an adequate nitrogen atmosphere deposition condition and postannealing temperature at 450 degrees C, the p-type conductive behaviors of AIN codoped ZnO films were achieved due to the formation of Zn-N bonds. According to the low-temperature photoluminescence spectra, the binding energy (E-A) of 0.16 eV for N acceptors can be calculated. Using time-resolved photoluminescence measurement, the carrier lifetime in AIN codoped ZnO films increases due to the reduction of oxygen vacancies caused by the Occupation of adequate nitrogen atoms.

引用

页码：2252 / 2258

页数：7

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