A HIGHLY TUNABLE MICROWAVE OSCILLATOR BASED ON MTJ STO TECHNOLOGY

被引：9

作者：

Chen, T. ^{[1
]}

Durrenfeld, P. ^{[2
]}

Rodriguez, S. ^{[1
]}

Akerman, J. ^{[1
,2
,3
]}

Rusu, A. ^{[1
]}

机构：

[1] KTH Royal Inst Technol, Sch Informat & Commun Technol, Kista, Sweden

[2] Univ Gothenburg, Dept Phys, Gothenburg, Sweden

[3] NanOsc AB, Kista, Sweden

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2014年 / 56卷 / 09期

基金：

瑞典研究理事会;

关键词：

spin torque oscillator; CMOS; microwave; wideband; highly tunable;

D O I：

10.1002/mop.28511

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article presents a fully ESD-protected, highly tunable microwave oscillator based on magnetic tunnel junction (MTJ) spin torque oscillator (STO) technology. The oscillator consists of a compact MTJ STO and a 65 nm CMOS wideband amplifier, which amplifies the RF signal of the MTJ STO to a level that can be used to drive a PLL. The (MTJ STO+amplifier IC) pair shows a measured quality factor (Q) of 170 and a wide tunability range from 3 to 7 GHz, which demonstrate its potential to be used as a microwave oscillator in multiband, multistandard radios. (C) 2014 Wiley Periodicals, Inc.

引用

页码：2092 / 2095

页数：4

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