Transient Analysis and Simulation of A High Power IGBT Non-Destructive Tester

被引：0
作者：
Ahmed, A. [1 ,3 ,4 ]
Coulbeck, L. [1 ,4 ]
Castellazzi, A. [2 ]
Johnson, C. M. [2 ]
机构：
[1] Dynex Semicond Ltd, Lincoln, England
[2] Univ Nottingham, Nottingham, England
[3] Soongsil Univ, Seoul, South Korea
[4] Zhuzhou CSR Times Elect Ltd, Power Semicond R&D Ctr, Zhuzhou, Peoples R China
来源：
2012 15TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE (EPE/PEMC) | 2012年
关键词：
IGBT; non-destructive; tester; simulation; MODULES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The study proposes the primary design and transient analysis of an IGBT non-destructive tester. The tester is designed to test IGBTs at voltage and current ratings less than 3.3kV 2.4kA. Due to stray elements, the circuit might oscillate during the different modes of operation and test conditions. These oscillations could cause high stresses to the IGBT switches in the circuit and cause one or more of the switches to fail. A transient analysis is performed taking into account the different operating conditions. Hence the potential for destructive oscillations can be minimized via the proper design of the IGBT gate resistors. Simulation results of a failure case study using spice simulation software are then presented.
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页数：5
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