Rear Contact Passivation for High Bandgap Cu(In,Ga)Se2 Solar Cells With a Flat Ga profile

被引：18

作者：

Ledinek, Dorothea ^{[1
]}

Salome, Pedro ^{[2
,3
]}

Hagglund, Carl ^{[1
]}

Zimmermann, Uwe ^{[1
]}

Edoff, Marika ^{[1
]}

机构：

[1] Uppsala Univ, Dept Engn Sci, S-75273 Uppsala, Sweden

[2] Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal

[3] Univ Aveiro, Dept Phys, P-3810193 Aveiro, Portugal

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2018年 / 8卷 / 03期

关键词：

Back contact; CIGS; CIGSe; Cu(In; Ga)Se-2; energy barrier; passivation; rear contact; thin films; two-diode model; EFFICIENCY; LAYER;

D O I：

10.1109/JPHOTOV.2018.2813259

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this study, Cu(In, Ga)Se-2 solar cells with a high bandgap (1.31 eV) and a flat Ga profile ([Ga]/([Ga]+[In]) approximate to 0.60) were examined. For absorber layer thicknesses varying from0.60 to 1.45 mu m, the Mo rear contact of one set of samples was passivated with an ultrathin (27 nm) Al2O3 layer with point contact openings, and compared with reference samples where the rear contact remained unpassivated. For the passivated samples, mainly large gains in the short-circuit current led to an up to 21% (relative) higher power conversion efficiency compared with unpassivated cells. The differences in temperature-dependent current voltage behavior between the passivated and the unpassivated samples and the thin and the thick samples can be explained by an oppositely poled secondary photodiode at the rear contact.

引用

页码：864 / 870

页数：7

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