Activation mechanism of annealed Mg-doped GaN in air

被引：28

作者：

Lin, YJ ^{[1
]}

机构：

[1] Feng Chia Univ, Dept Elect Engn, Taichung 407, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 15期

关键词：

D O I：

10.1063/1.1704873

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, the activation mechanism of annealed Mg-doped GaN in air and the influence of ambient on activation of Mg-doped GaN were investigated. According to the experimental results, we found that the dissociation of Mg-Ga-H, and the formation of hydrogenated gallium vacancies (VGaH2) and gallium vacancies occupied by interstitial Mg during the air-activation process, led to an increase in the hole concentration. In addition, from the observed photoluminescence results and the secondary ion mass spectroscopy measurements, it is suggested that the formation of VGaH2 will result in an enhancement of hydrogen desorption from the Mg-Ga-H complexes. (C) 2004 American Institute of Physics.

引用

页码：2760 / 2762

页数：3

共 50 条

[21] Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition [J].

Gotz, W ;

Johnson, NM ;

Walker, J ;

Bour, DP ;

Street, RA .

APPLIED PHYSICS LETTERS, 1996, 68 (05) :667-669

[22] Thermal activation of Mg-doped GaN as monitored by electron paramagnetic resonance spectroscopy [J].

Zvanut, ME ;

Matlock, DM ;

Henry, RL ;

Koleske, D ;

Wickenden, A .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (04) :1884-1887

[23] Local vibrational modes in Mg-doped GaN as a probe of activation and deactivation of acceptors [J].

Kurimoto, E ;

Harima, H ;

Sone, Y ;

Inoue, T ;

Ishida, M ;

Taneya, M .

PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 :705-708

[24] Optimum rapid thermal activation of Mg-doped p-type GaN [J].

Naoamori, Motoi ;

Ito, Shuichi ;

Saito, Hiroshi ;

Shiojima, Kenji ;

Yamada, Shuhei ;

Shibata, Naoki ;

Kuzuhara, Masaaki .

Japanese Journal of Applied Physics, 2008, 47 (4 PART 2) :2865-2867

[25] Low-temperature activation of Mg-doped GaN with Pd thin films [J].

Waki, I ;

Fujioka, H ;

Oshima, M ;

Miki, H ;

Okuyama, M .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 228 (02) :391-393

[26] Optimum rapid thermal activation of Mg-doped p-type GaN [J].

Nagamori, Motoi ;

Ito, Shuichi ;

Saito, Hiroshi ;

Shiojima, Kenji ;

Yamada, Shuhei ;

Shibata, Naoki ;

Kuzuhara, Masaaki .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) :2865-2867

[27] Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis [J].

Nardo, A. ;

de Santi, C. ;

Carraro, C. ;

Sgarbossa, F. ;

Buffolo, M. ;

Diehle, P. ;

Gierth, S. ;

Altmann, F. ;

Hahn, H. ;

Fahle, D. ;

Heuken, M. ;

Fouchier, M. ;

Gasparotto, A. ;

Napolitani, E. ;

Meneghesso, G. ;

Zanoni, E. ;

Meneghini, M. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 55 (18)

[28] Low-temperature activation of mg-doped GaN using Ni films [J].

Waki, I ;

Fujioka, H ;

Oshima, M ;

Miki, H ;

Fukizawa, A .

APPLIED PHYSICS LETTERS, 2001, 78 (19) :2899-2901

[29] Low temperature activation of Mg-doped GaN in O2 ambient [J].

Kuo, CH ;

Chang, SJ ;

Su, YK ;

Wu, LW ;

Sheu, JK ;

Chen, CH ;

Chi, GC .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (2A) :L112-L114

[30] Effects of growth conditions on the acceptor activation of Mg-doped p-GaN [J].

Ke, Wen-Cheng ;

Lee, Shuo-Jen ;

Chen, Shiow-Long ;

Kao, Chia-Yu ;

Houng, Wei-Chung .

MATERIALS CHEMISTRY AND PHYSICS, 2012, 133 (2-3) :1029-1033

← 1 2 3 4 5 →