Localization of excitons in the wetting layer accompanying self-assembled InAs/GaAs quantum dots

被引：5

作者：

Babinski, A ^{[1
]}

Raymond, S

Wasilewski, Z

Lapointe, J

Potemski, M

机构：

[1] MPIFKF, Grenoble High Magnet Field Lab, F-38042 Grenoble, France

[2] CNRS, F-38042 Grenoble, France

[3] Warsaw Univ, Inst Expt Phys, PL-00681 Warsaw, Poland

[4] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON, Canada

来源：

ACTA PHYSICA POLONICA A | 2004年 / 105卷 / 06期

关键词：

D O I：

10.12693/APhysPolA.105.547

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A wetting layer is a narrow, highly strained quantum well, which accompanies quantum dots grown in Stranski-Krastanow mode. Its importance for a full description of the quantum dots properties has recently been pointed out. It has been shown for example that excitons can be localized by potential fluctuations in the wetting layer. This is equivalent to the formation of "natural" quantum dots in the WL. Excitonic emission from the single dots formed in the wetting layer accompanying the InAs/GaAs self-assembled quantum dots has been investigated in a high magnetic field (up to 23 T). Quadruplet splitting of the investigated emission line has been observed. The attribution of the emission line to the recombination of negatively charged exciton is discussed.

引用

页码：547 / 552

页数：6

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