共 19 条
Reproducible low-current resistive switching of metal/Pr0.7Ca0.3MnO3/Pt junctions with a point-contact top electrode
被引:6
作者:

Gang Jian-Lei
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Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

Li Song-Lin
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Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

Meng Yang
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Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

Liao Zhao-Liang
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Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

Liang Xue-Jin
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Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

Chen Dong-Min
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Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
机构:
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
基金:
中国国家自然科学基金;
关键词:
electrical pulse induced resistive switching;
oxygen ions drift in the electrical field;
resistive switching;
D O I:
10.7498/aps.58.5730
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
Current-voltage ( I-V) and the electrical pulse induced resistive switching ( EPIR) characteristics of metal/Pr0.7Ca0.3MnO3/Pt sandwich structures, where the metal is a point-contact Pt or W electrode, are investigated by using a home-made conductive AFM. The structures with both Pt and W tips behaves as rather reproducible bipolar resistive switching ( RS) with an RS ratio larger than 100. However W/Pr0.7Ca0.3MnO3/Pt structures shows EPIR under a compliance current of 10 nA and reproducible bipolar RS under a compliance current of 100 pA, which is about three orders lower than the published values and shows the potential applications in low power memory device. Further analysis of I-V characteristics at different positions of sample, under different current compliances, with different contact areas of device suggests that an enhanced oxygen vacancy migration due to point contact induced local intense electrical field, gives rise to a stable RS for Pt/Pr0.7Ca0.3MnO3/Pt devices.
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页码:5730 / 5735
页数:6
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