Characterization of blue-green m-plane InGaN light emitting diodes

被引：80

作者：

Lin, You-Da ^{[1
,2
]}

Chakraborty, Arpan ^{[1
,2
]}

Brinkley, Stuart ^{[1
,2
]}

Kuo, Hsun Chih ^{[1
,2
]}

Melo, Thiago ^{[1
,2
]}

Fujito, Kenji ^{[3
]}

Speck, James S. ^{[1
,2
]}

DenBaars, Steven P. ^{[1
,2
]}

Nakamura, Shuji ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Mitsubishi Chem Corp, Optoelect Lab, Ushiku, Ibaraki 3001295, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 26期

关键词：

brightness; current density; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; MULTIPLE-QUANTUM WELLS; GAN; EMISSION; SINGLE;

D O I：

10.1063/1.3167824

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High indium content blue-green (460-520 nm) m-plane InGaN light emitting diodes (LEDs) were grown on low defect-density m-plane GaN substrates. Systematic studies were performed on packaged blue-green LED lamps by using a range of well and barrier thicknesses. Photoluminance and electroluminance peak wavelengths increased while the well width was increased from 2 to 4 nm. The highest output power was achieved for well width of 2.5 nm. The output power improved significantly with the increase in barrier thickness. Nearly blueshift-free emission was observed in all LEDs from 1-400 A/cm(2) current density under pulsed operation.

引用

页数：3

共 14 条

[1] Spontaneous polarization and piezoelectric constants of III-V nitrides [J].

Bernardini, F ;

Fiorentini, V ;

Vanderbilt, D .

PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027

[2] Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates [J].

Chakraborty, A ;

Haskell, BA ;

Keller, S ;

Speck, JS ;

Denbaars, SP ;

Nakamura, S ;

Mishra, UK .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (1-7) :L173-L175

[3] Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak [J].

Chakraborty, A ;

Haskell, BA ;

Keller, S ;

Speck, JS ;

DenBaars, SP ;

Nakamura, S ;

Mishra, UK .

APPLIED PHYSICS LETTERS, 2004, 85 (22) :5143-5145

[4] Ultraviolet light emitting diodes using non-polar a-plane GaN-AlGaN multiple quantum wells [J].

Chen, CQ ;

Adivarahan, V ;

Yang, JW ;

Shatalov, M ;

Kuokstis, E ;

Khan, MA .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (9AB) :L1039-L1040

[5] Spontaneous emission of localized excitons in InGaN single and multiquantum well structures [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1996, 69 (27) :4188-4190

[6] Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire [J].

Chitnis, A ;

Chen, C ;

Adivarahan, V ;

Shatalov, M ;

Kuokstis, E ;

Mandavilli, V ;

Yang, J ;

Khan, MA .

APPLIED PHYSICS LETTERS, 2004, 84 (18) :3663-3665

[7] Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes [J].

Gardner, NF ;

Kim, JC ;

Wierer, JJ ;

Shen, YC ;

Krames, MR .

APPLIED PHYSICS LETTERS, 2005, 86 (11) :1-3

[8] Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells [J].

Im, JS ;

Kollmer, H ;

Off, J ;

Sohmer, A ;

Scholz, F ;

Hangleiter, A .

PHYSICAL REVIEW B, 1998, 57 (16) :R9435-R9438

[9] Study of nonpolar m-plane InGaN/GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition [J].

Kim, Kwang-Choong ;

Schmidt, Mathew C. ;

Sato, Hitoshi ;

Wu, Feng ;

Fellows, Natalie ;

Jia, Zhongyuan ;

Saito, Makoto ;

Nakamura, Shuji ;

DenBaars, Steven P. ;

Speck, James S. .

APPLIED PHYSICS LETTERS, 2007, 91 (18)

[10] Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates [J].

Koyama, T. ;

Onuma, T. ;

Masui, H. ;

Chakraborty, A. ;

Haskell, B. A. ;

Keller, S. ;

Mishra, U. K. ;

Speck, J. S. ;

Nakamura, S. ;

DenBaars, S. P. ;

Sota, T. ;

Chichibu, S. F. .

APPLIED PHYSICS LETTERS, 2006, 89 (09)

← 1 2 →