Fabrication and Characterization of SnO2/CH3NH3PbI3 based Photodetector

被引：1
|
作者：
Upadhyay, Rishibrind Kumar [1 ]
Singh, Abhinav Pratap [1 ]
Upadhyay, Deepehandra [1 ]
Ratan, Smrity [1 ]
Jit, Satyabrata [1 ]
机构：
[1] Indian Inst Technol BHU, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
来源：
2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020) | 2020年
关键词：
Low cost; SnO2; CH3NH3PbI3; Photodetector; Sol-Gel;
D O I：
10.1109/edtm47692.2020.9117808
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we report the Photodetector based on SnO2/CH3NH3PbI3 based heterojunction diode on Indium doped tin oxide (ITO) substrate. The perovskite CH3NH3PbI3 and metal oxide SnO2 are synthesized using the sol-gel method. The synthesized metal oxide SnO2 and perovskite CH3NH3PbI3 characterized using X-Ray diffraction (XRD), High resolution Scanning Electron Microscope (HRSEM), UV visible and Photo luminance Spectroscopy. XRD result confirms the formation rutile tetragonal crystalline structure of SnO2 and Tetragonal crystalline structure of perovskite CH3NH3PbI3, and HRSEM image shows the uniform distribution of particles. An efficient photoluminescence band is observed at similar to 795 nm in SnO2/CH3NH3PbI3 thin films at ambient temperature when excited with 473 nm wavelength light Finally, SnO2/CH3NH3PbI3 based heterojunction diode is investigated for an electrical and optical response using fabricated ITO/SnO2/CH3NH3PbI3/ Ag Photodetector device.
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页数：4
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