Radio frequency source power effect on silicon nitride films deposited by a room-temperature pulsed-PECVD

Silicon nitride (SiN) films deposited by using a pulsed-plasma enhanced chemical vapor deposition system at room temperature were investigated as a function of radio frequency source power and duty ratio in the experimental ranges of 200-800 W and 40-90%, respectively. Diagnostic parameters, measured using a noninvasive ion energy analyzer, were related to SiN deposition rate. Decreasing the source power increased high ion energy, but decreased low ion energy. A high similarity between ion energy flux and ion energy was Decreasing the source power increased the deposition rate for all duty ratios. For all the variations observed. in the power and duty ratio, the deposition rate varied in the range of 290-640 angstrom/min. Decreasing the duty ratio was effective in increasing the deposition rate. The deposition rate was strongly correlated to high ion energy and high ion energy flux as a function of source power. (C) 2009 Elsevier B.V. All rights reserved.