Study of the effect of crystallization parameters on gaseous inclusions in sapphire ribbons grown by the Stepanov method

被引：1
|
作者：
Borodin, A. V. [1 ]
Kamynina, V. E. [1 ]
Frantsev, D. N. [1 ]
Yudin, M. V. [1 ]
机构：
[1] Fed State Unitary Enterprise Expt Plant Sci Instr, Chernogolovka, Russia
来源：
CRYSTALLOGRAPHY REPORTS | 2009年 / 54卷 / 04期
关键词：
81.10.Fq; 42.79.Bh; 81.05.Zx;
D O I：
10.1134/S106377450904021X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The effect of growth parameters on the two main types of gaseous inclusions in sapphire ribbons-bubbles in the crystal bulk and near-surface pores-have been investigated. The parameters, providing a minimum number of bubbles and a minimum thickness of the surface porous layer, are determined. The experimental data are obtained during the commercial production of sapphire single crystals by the Stepanov method using an expert software package that provides automatic collection and treatment of the process data and the results of a crystal-quality analysis. The effect of the following parameters is considered: the derivative of the mass sensor signal, which indirectly characterizes the temperature of the shaping surface and the melt meniscus height; the seeding power; the melt exposure time in a crucible before seeding; and the technique of shaper preparation.
引用
收藏
页码：669 / 674
页数：6
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