Black phosphorus as saturable absorber for the Q-switched Er:ZBLAN fiber laser at 2.8 μm

被引:286
作者
Qin, Zhipeng [1 ]
Xie, Guoqiang [1 ]
Zhang, Han [2 ]
Zhao, Chujun [3 ]
Yuan, Peng [1 ]
Wen, Shuangchun [3 ]
Qian, Liejia [1 ]
机构
[1] Shanghai Jiao Tong Univ, IFSA Collaborat Innovat Ctr, Dept Phys & Astron, Key Lab Laser Plasmas,Minist Educ, Shanghai 200240, Peoples R China
[2] Shenzhen Univ, Coll Optoelect Engn, SZU NUS Collaborat Innovat Ctr Optoelect Sci & Te, Key Lab Optoelect Devices & Syst,Minist Educ & Gu, Shenzhen 518060, Peoples R China
[3] Hunan Univ, Sch Phys & Elect, Key Lab MicronanooptoelectDevices, Minist Educ, Changsha 410082, Hunan, Peoples R China
来源
OPTICS EXPRESS | 2015年 / 23卷 / 19期
基金
中国国家自然科学基金;
关键词
TOPOLOGICAL INSULATOR BI2SE3; OPTICAL MODULATOR; MODE-LOCKING; GRAPHENE; WAVELENGTH; TRANSISTORS;
D O I
10.1364/OE.23.024713
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Black phosphorus, a newly emerged two-dimensional material, has attracted wide attention as novel photonic material. Here, multilayer black phosphorus is successfully fabricated by liquid phase exfoliation method. By employing black phosphorus as saturable absorber, we demonstrate a passively Q-switched Er-doped ZBLAN fiber laser at the wavelength of 2.8 mu m. The modulation depth and saturation fluence of the black phosphorus saturable absorber are measured to be 15% and 9 mu J/cm(2), respectively. The Q-switched fiber laser delivers a maximum average power of 485 mW with corresponding pulse energy of 7.7 mu J and pulse width of 1.18 mu s at repetition rate of 63 kHz. To the best of our knowledge, this is the first time to demonstrate that black phosphorus can realize Q-switching of 2.8-mu m fiber laser. Our research results show that black phosphorus is a promising saturable absorber for mid-infrared pulsed lasers. (C) 2015 Optical Society of America
引用
收藏
页码:24713 / 24718
页数:6
相关论文
共 34 条
  • [1] Black Phosphorus Gas Sensors
    Abbas, Ahmad N.
    Liu, Bilu
    Chen, Liang
    Ma, Yuqiang
    Cong, Sen
    Aroonyadet, Noppadol
    Koepf, Marianne
    Nilges, Tom
    Zhou, Chongwu
    [J]. ACS NANO, 2015, 9 (05) : 5618 - 5624
  • [2] Al-Hilli A. A., 1972, Journal of Crystal Growth, V15, P93, DOI 10.1016/0022-0248(72)90129-7
  • [3] Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides
    Ayari, Anthony
    Cobas, Enrique
    Ogundadegbe, Ololade
    Fuhrer, Michael S.
    [J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (01)
  • [4] Mechanically exfoliated black phosphorus as a new saturable absorber for both Q-switching and mode-locking laser operation
    Chen, Yu
    Jiang, Guobao
    Chen, Shuqing
    Guo, Zhinan
    Yu, Xuefeng
    Zhao, Chujun
    Zhang, Han
    Bao, Qiaoliang
    Wen, Shuangchun
    Tang, Dingyuan
    Fan, Dianyuan
    [J]. OPTICS EXPRESS, 2015, 23 (10): : 12823 - 12833
  • [5] Bilayer Phosphorene: Effect of Stacking Order on Bandgap and Its Potential Applications in Thin-Film Solar Cells
    Dai, Jun
    Zeng, Xiao Cheng
    [J]. JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2014, 5 (07): : 1289 - 1293
  • [6] Measurement of ultrafast carrier dynamics in epitaxial graphene
    Dawlaty, Jahan M.
    Shivaraman, Shriram
    Chandrashekhar, Mvs
    Rana, Farhan
    Spencer, Michael G.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (04)
  • [7] Strong plasmonic enhancement of photovoltage in graphene
    Echtermeyer, T. J.
    Britnell, L.
    Jasnos, P. K.
    Lombardo, A.
    Gorbachev, R. V.
    Grigorenko, A. N.
    Geim, A. K.
    Ferrari, A. C.
    Novoselov, K. S.
    [J]. NATURE COMMUNICATIONS, 2011, 2
  • [8] Graphene: Status and Prospects
    Geim, A. K.
    [J]. SCIENCE, 2009, 324 (5934) : 1530 - 1534
  • [9] Jiang T., 2015, ARXIV150407341
  • [10] Li D., 2015, ARXIV150500480