Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT

被引：4

作者：

Eid, J. ^{[1
]}

Galben, I-G. ^{[1
]}

Zoulis, G. ^{[2
]}

Robert, T. ^{[2
]}

Chaussende, D. ^{[1
]}

Juillaguet, S. ^{[2
]}

Tiberj, A. ^{[2
]}

Camassel, J. ^{[2
]}

机构：

[1] Grenoble INP CNRS, Mat & Genie Phys Lab, F-38016 Grenoble, France

[2] UM 2 CNRS, Etud Semicond Grp, UMR 5650, F-34095 Montpellier 5, France

来源：

SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷

关键词：

3C-SiC; CF-PVT; KOH etching; N doping; PHYSICAL VAPOR TRANSPORT; SILICON-CARBIDE; CONTINUOUS FEED;

D O I：

10.4028/www.scientific.net/MSF.615-617.45

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a structural and optical investigation of nitrogen-doped single crystals of cubic silicon carbide prepared by the continuous feed - physical vapour transport method. Self-nucleated crystals were produced which exhibited well faceted square and triangular shapes. KOH etching was used to characterize the Structural defects. like stacking faults and dislocations. The effect of changing the nitrogen flow rate oil the different crystalline orientations was investigated by Raman spectroscopy and low temperature photoluminescence techniques.

引用

页码：45 / 48

页数：4

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