GaAs detectors irradiated by low doses of electrons

被引：17

作者：

Sagatova, A. ^{[1
,2
]}

Zat'ko, B. ^{[3
]}

Pavlovic, M. ^{[1
]}

Sedlackova, K. ^{[1
]}

Hybler, P. ^{[2
]}

Dubecky, F. ^{[3
]}

Necas, V. ^{[1
]}

机构：

[1] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Inst Nucl & Phys Engn, Bratislava 81219, Slovakia

[2] Slovak Med Univ, Univ Ctr Electron Accelerators, Trencin 91106, Slovakia

[3] Slovak Acad Sci, Inst Elect Engn, Bratislava 84104, Slovakia

来源：

JOURNAL OF INSTRUMENTATION | 2014年 / 9卷

关键词：

Solid state detectors; Radiation-hard detectors; Radiation damage to detector materials (solid state); Gamma detectors (scintillators; CZT; HPG; HgI etc); RADIATION-RESISTANCE;

D O I：

10.1088/1748-0221/9/04/C04036

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Semi-insulating (SI) GaAs detectors were irradiated by 5MeV electrons up to a dose of 69 kGy, in order to test their radiation hardness. The electric and spectrometric stability of detectors was examined as a function of the absorbed dose. Investigated detectors showed a very good detector radiation resistance within a dose up to 40 kGy followed by deterioration of some spectrometric and electric properties. However, the reverse current and the detector charge collection efficiency showed minimum changes with the overall applied doses. The obtained results will be used as a preliminary study for further radiation-hardness investigations of GaAs detectors against high energy electrons. This will complete our previous studies of GaAs detector radiation hardness against fast neutrons and gamma-rays.

引用

页数：9

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