DYNAMOS: a numerical MOSFET model including quantum-mechanical and near-interface trap transient effects

被引：3
作者：
Masson, P
Autran, JL
Munteanu, D
机构：
[1] L2MP, CNRS, UMR 6137, F-13384 Marseille 13, France
[2] Inst Natl Sci Appl, LPM, CNRS, UMR 5511, F-69621 Villeurbanne, France
[3] CEA, LETI, F-38054 Grenoble 20, France
[4] IMT, ICF, L2MP, CNRS,UMR 6137, F-13451 Marseille, France
来源：
SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 07期
关键词：
D O I：
10.1016/S0038-1101(02)00041-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A numerical MOSFET model (DYNAMOS) is presented. The present approach accounts for quantum effects in the semiconductor substrate by solving the self-consistent one-dimensional Schrodinger and Poisson equations. It also includes a transient model of interface and near-interface oxide traps based on Schockley-Read-Hall statistics. By extension, this model is able to simulate the charging/discharging of an arbitrary trap sheet present in the gate-dielectric system. As a result, the calculation of the source-to-drain current, valid in both weak and strong inversion regimes before saturation, is well-adapted to describe the dynamic behavior (under a gate voltage sweep) of ultra-thin gate oxide MOSFETs, oxide/nitride and double-layer high-k dielectric based devices. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1051 / 1059
页数：9
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