Monolithically Integrated Temperature Sensor in Silicon Carbide Power MOSFETs

被引：38

作者：

Berthou, Maxime ^{[1
]}

Godignon, Philippe ^{[1
]}

Millan, Jose ^{[1
]}

机构：

[1] CSIC, Inst Microelect Barcelona, Ctr Nacl Microelect, Bellaterra 08193, Spain

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2014年 / 29卷 / 09期

关键词：

Monolithic integrated sensor; p-type SiC; power MOSFET; silicon carbide; temperature sensor;

D O I：

10.1109/TPEL.2013.2289013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the first integrated temperature sensor in a SiC power MOSFET. An analytical model has been proposed to assess its behavior up to 300 degrees C. We present the tested design and its advantages compared to other solutions. We also propose possible optimizations in order to simplify it and reduce its size. 2.25 mm(2) power MOSFETs have been fabricated with and without temperature sensor. Measurements show that the temperature sensor does not impact the power MOSFET characteristics and its integration does not demand supplementary process steps. To demonstrate the functionality of our integrated sensor, we have calibrated the temperature dependence of its resistance to assess the internal temperature of the device at different bias.

引用

页码：4970 / 4977

页数：8

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