Simulation Study of Single-Event Burnout in GaN MISFET With Schottky Element

被引：18

作者：

Wang, Ying ^{[1
]}

Fei, Xin-Xing ^{[2
]}

Wu, Xue ^{[3
]}

Li, Xingji ^{[4
]}

Yang, Jianqun ^{[4
]}

Bao, Mengtian ^{[1
]}

Cao, Fei ^{[1
]}

机构：

[1] Hangzhou Dianzi Univ, Minist Educ, Key Lab RF Circuits & Syst, Hangzhou 310018, Peoples R China

[2] Harbin Engn Univ, Coll Informat & Commun Engn, Harbin 150001, Peoples R China

[3] Natl Key Lab Analog Integrated Circuits, Chongqing 400060, Peoples R China

[4] Harbin Inst Technol, Natl Key Lab Mat Behav & Evaluat Technol Space En, Harbin 150080, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2020年 / 67卷 / 12期

基金：

中国国家自然科学基金;

关键词：

Gallium nitride; MISFETs; Radiation effects; HEMTs; MODFETs; Mathematical model; Metals; MISFET; Schottky contact (SC); single-event burnout (SEB); SEB threshold voltage; technology computer aided design (TCAD); DEGRADATION; IRRADIATION; TRANSISTORS; BEHAVIOR; HEMTS;

D O I：

10.1109/TED.2020.3027533

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, we investigate a new hardened GaN MISFET with an integrated Schottky contact (SC-MISFET). The new device architecture significantly improves the single-event burnout (SEB) characteristics. Compared to the field plate conventional GaN MISFET (FPC-MISFET), the Schottky metal can extract a larger number of holes, which are generated by heavy-ion irradiation. In addition, the number of carriers involved in the impact ionization process is substantially reduced. These features enable the new hardened structure to achieve a better overall SEB characteristic. After heavy-ion irradiation, the SEB threshold voltages of devices with conventional and hardened structures are 520 and 710 V, respectively.

引用

页码：5466 / 5471

页数：6

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