Progress of terahertz devices based on graphene

被引：8

作者：

Feng Wei ^{[1
]}

Zhang Rong ^{[2
]}

Cao Jun-Cheng ^{[2
]}

机构：

[1] Jiangsu Univ, Dept Phys, Fac Sci, Zhenjiang 212013, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R China

来源：

ACTA PHYSICA SINICA | 2015年 / 64卷 / 22期

基金：

中国国家自然科学基金;

关键词：

terahertz; graphene; terahertz laser; terahertz detectors;

D O I：

10.7498/aps.64.229501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Graphene has unique electronic properties stemming from a linear gapless carrier energy spectrum, and has dominant advantages in the research of devices such as lasers, detectors and modulators in terahertz region due to its tunable energy gap and extremely high carrier mobility. In this review, we summarize its latest progress in applications of terahertz devices such as lasers, detectors and modulators. Terahertz lasers based on graphene can reach a gain as high as 10(4) cm(-1), and terahertz detectors with different structures such as a bilayer graphene field-effect transistor with top gate and buried gate can achieve NEP (noise equivalent power) similar to nW/root Hz. Graphene terahertz modulators, which are equipped with transmission configuration and reflection configuration, can have a very high modulation depth. These results may be helpful for developing the high-efficiency graphene terahertz devices.

引用

页数：9

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