共 7 条
- [1] BERNARD D, 2003, IEEE P 28 INT EL MAN
- [2] BLISH R, 2002, IEEE P INT REL PHYS
- [3] CLIFFORD T, 2002, ELECT PACKAGING FEB
- [5] JOHNSTON M, MICRON INTERNAL PUBL
- [6] Kamohara S., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P539, DOI 10.1109/IEDM.1999.824211
- [7] Impact of gate-induced drain leakage current on the tail distribution of DRAM data retention time [J]. INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, : 837 - 840