Built-in Self-test (BIST) Algorithm to Mitigate Process Variation in Millimeter Wave Circuits

被引:0
作者
Mahzabeen, Tabassum [1 ]
Henderson, Rashaunda M. [2 ]
Banerjee, Bhaskar [3 ]
机构
[1] Nokia Solut & Networks, Irving, TX 75039 USA
[2] UT Dallas, Dept Elect Engn, Richardson, TX USA
[3] Broadcom, San Jose, CA USA
来源
2014 IEEE 15TH ANNUAL WIRELESS AND MICROWAVE TECHNOLOGY CONFERENCE (WAMICON) | 2014年
关键词
Built-in self-test (BIST); CMOS; low noise amplifier; millimeter-wave; ring oscillator;
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A novel built-in self-test (BIST) algorithm has been devised in this work. The concept of the algorithm is that process variation within a die is usually location based; it is not random. Therefore, if a low frequency ring oscillator is placed 40 mu m away from the transistors in an 80 GHz low noise amplifier (LNA), both the LNA and the ring oscillator undergo similar process variation in device sizes. Device variation in the ring oscillator can be predicted from it's oscillation frequency shift. It is assumed that the amplifier's device also vary in similar fashion. Thus, from a low frequency measurement of the ring oscillator's frequency, the device variation in the high frequency amplifier can be estimated. This reduces the cost of high frequency measurements. The work is demonstrated in Advanced Design System (ADS) simulation.
引用
收藏
页数:3
相关论文
共 7 条
[1]  
Bhushan M., 2006, MICR TEST STRUCT 200, P87
[2]  
Cui S.D, 2010, THESIS
[3]  
Das Tejasvi, 2005, IEEE T CIRCUITS SY 2, V52
[4]  
Kuhn Kelin, 2008, Intel Technology Journal, V12, P93
[5]   Broadband Root-Mean-Square Detector in CMOS for On-Chip Measurements of Millimeter-Wave Voltages [J].
Lee, Chuan ;
Choi, Wooyeol ;
Han, Ruonan ;
Shichijo, Hisashi ;
Kenneth, K. O. .
IEEE ELECTRON DEVICE LETTERS, 2012, 33 (06) :752-754
[6]   Modeling process variability in scaled CMOS technology [J].
Saha S.K. .
IEEE Design and Test of Computers, 2010, 27 (02) :8-16
[7]  
Tuinhout H., 2002, Solid-State Device Research Conference, P95, DOI DOI 10.1109/ESSDERC.2002.194879