Theoretical investigation of migration of group V adatoms on GaAs(001) surface

被引：2

作者：

Seino, K ^{[1
]}

Ishii, A ^{[1
]}

Aisaka, T ^{[1
]}

机构：

[1] Tottori Univ, Dept Appl Math & Phys, Tottori 6808552, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷

关键词：

arsenates; gallium compounds;

D O I：

10.1016/S0022-0248(01)01870-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The microscopic migration of group V adatoms on a Ga-terminated GaAs(0 0 1) surface is investigated by performing first-principle calculations using density functional theory and a slab model of the surface. It is found that the hopping barrier energies of the As and P adatoms on Ga-terminated GaAs(0 0 1) surface are anisotropic and that the hopping barrier energies of those are lower than that of the Ga adatom. Comparing the hopping barrier energies of the As and P adatoms, the migration of the As adatom is easier than that of the P adatom. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：121 / 124

页数：4

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