Utilization of SiC MOSFET body diode in hard switching applications

被引：14

作者：

Bolotnikovt, A. ^{[1
]}

Glaser, J. ^{[1
]}

Nasadoski, J. ^{[1
]}

Losee, P. ^{[1
]}

Klopman, S. ^{[1
]}

Permuy, A. ^{[2
]}

Stevanovic, L. ^{[1
]}

机构：

[1] Gen Elect Global Res Ctr, Niskayuna, NY 12309 USA

[2] Gen Elect Energy Management Power Convers, Massy, France

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

SiC; MOSFET; body diode; buck-boost converter; DEGRADATION;

D O I：

10.4028/www.scientific.net/MSF.778-780.947

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This work discusses the possibility of using SiC MOSFET body diode in switching power conversion applications, focusing on performance and reliability aspects.

引用

页码：947 / +

页数：2

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