Fabrication and Ferroelectric Properties of BaTiO3 Thin Films Deposited on Silicon Substrate Using PLD

In this work, thin films of BaTiO3 have been fabricated by pulsed-laser ablation on silicon substrate. The x-ray diffraction pattern of the polycrystalline and post annealed films in presence of oxygen indicates perovskite tetragonal phase. The room temperature ferroelectric response measured by "Positive-Up-Negative-Down" PUND method shows hysteretic behaviour in polarization versus electric field loops, confirms the traditional ferroelectric nature. The polarization switching dynamics can be described by Kolmogorov-Avrami-Ishibashi (KAI) model based on nucleation and growth of domains. The room temperature ferroelectricity of BaTiO3 deposited on silicon substrate is promising for application in electronic and memory devices. (C) 2017 Elsevier Ltd. All rights reserved.