Properties and field emission characteristics of Ga:ZnO whiskers

被引：3

作者：

Ueda, Yoshikazu ^{[1
]}

Yoshida, Kazuo ^{[2
]}

Saitoh, Hidetoshi ^{[3
]}

机构：

[1] Asahi Kasei Chem Co Ltd, Chem & Chem Proc Lab, Okayama 7128633, Japan

[2] Asahi Kasei Co Ltd, Cent Res Lab, Shizuoka 4168501, Japan

[3] Nagaoka Univ Technol, Dept Mat Sci & Technol, Niigata 9402188, Japan

来源：

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 2009年 / 117卷 / 1364期

关键词：

Whisker; ZnO; CVD; Dopant; SEM; X-ray diffraction; Field emission; EMITTERS;

D O I：

10.2109/jcersj2.117.508

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ga:ZnO whiskers were grown by atmospheric chemical vapor deposition on single crystalline silicon (100). By adjusting the concentration of the gallium dopant, the crystallite density and radius of curvature could be varied. The c-axis orientation of the Ga:ZnO crystallite was less than that of the Al:ZnO crystallite. The field emission characteristics of Ga:ZnO whisker emitters were investigated by varying the crystallite density and radius of curvature. Moreover, when the crystallite density was in the range 0.8 x 10(4)-1.6 x 10(4)/mm(2) and the crystallite radii of curvature were in the range 46-106 nm, the electric field, E, necessary to obtain a current density, J, of 100 mu A/cm(2) was in the range 5.3-5.7 V/mu m. (C) 2009 The Ceramic Society of Japan. All rights reserved.

引用

页码：508 / 514

页数：7

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