Temperature Dependent Phonon Shifts in Single-Layer WS2

被引:195
作者
Thripuranthaka, M. [1 ]
Late, Dattatray J. [1 ]
机构
[1] CSIR, Natl Chem Lab, Phys & Mat Chem Div, Pune 411008, Maharashtra, India
关键词
WS2; layered materials; Raman spectroscopy; phonon vibrations; thermal effect; MOS2; BEHAVIOR;
D O I
10.1021/am404847d
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Atomically thin two-dimensional tungsten disulfide (WS2) sheets have attracted much attention due to their potential for future nanoelectronic device applications. We report first experimental investigation on temperature dependent Raman spectra of single-layer WS2 prepared using micromechanical exfoliation. Our temperature dependent Raman spectroscopy results shows that the E-2g(1) and A(1g) modes of single-layer WS2 soften as temperature increases from 77 to 623 K. The calculated temperature coefficients of the frequencies of 2LA(M), E-2g(1), A(1g), and A(1g)(M) + LA(M) modes of single-layer WS2 were observed to be -0.008, -0.006, -0.006, and -0.01 cm(-1) K-1, respectively. The results were explained in terms of a double resonance process which is active in atomically thin nanosheet. This process can also be largely applicable in other emerging single-layer materials.
引用
收藏
页码:1158 / 1163
页数:6
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