Improved field-effect mobility in short oligothiophenes: Quaterthiophene and quinquethiophene

被引：129

作者：

Hajlaoui, R ^{[1
]}

Horowitz, G ^{[1
]}

Garnier, F ^{[1
]}

ArceBrouchet, A ^{[1
]}

Laigre, L ^{[1
]}

ElKassmi, A ^{[1
]}

Demanze, F ^{[1
]}

Kouki, F ^{[1
]}

机构：

[1] CNRS,MAT MOL LAB,F-94320 THIAIS,FRANCE

来源：

ADVANCED MATERIALS | 1997年 / 9卷 / 05期

关键词：

D O I：

10.1002/adma.19970090504

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Organic field effect transistors (OFETs) made from quaterthiophene (4T) and quinquethiophene (5T) have been fabricated with greatly enhanced field-effect mobilities. It is shown that the problem seems to lie in achieving efficient charge injection rather than in poor charge transport within the material. Doping of the drain and source contacts with a thin layer of the electron acceptor TCNQ is demonstrated to improve charge injection in 4T devices. Other factors affecting performance are considered briefly.

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页码：389 / &

页数：4

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