Bias-dependent electron spin lifetimes in n-GaAs and the role of donor impact ionization

被引：34
作者：
Furis, M. [1 ]
Smith, D. L.
Crooker, S. A.
Reno, J. L.
机构：
[1] Los Alamos Natl Lab, Los Alamos, NM 87545 USA
[2] Sandia Natl Labs, Dept 1123, Albuquerque, NM 87185 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 10期
关键词：
D O I：
10.1063/1.2345608
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In bulk n-GaAs epilayers doped near the metal-insulator transition, the authors study the evolution of electron spin lifetime tau(s) as a function of applied lateral electrical bias E-x. tau(s) is measured via the Hanle effect using magneto-optical Kerr rotation. At low temperatures (T < 10 K, where electrons are partially localized and tau(s)> 100 ns at zero bias), a marked collapse of tau(s) is observed when E-x exceeds the donor impact ionization threshold at similar to 10 V/cm. A steep increase in the concentration of warm delocalized electrons-subject to Dyakonov-Perel spin relaxation [Sov. Phys. Solid State 13, 3023 (1972)]-accounts for the rapid collapse of tau(s) and strongly influences electron spin transport in this regime. (c) 2006 American Institute of Physics.
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