Positive Threshold-Voltage Shift of Y2O3 Gate Dielectric InAlN/GaN-on-Si (111) MOSHEMTs with Respect to HEMTs

被引：11

作者：

Bera, M. K. ^{[1
]}

Liu, Y. ^{[1
]}

Kyaw, L. M. ^{[1
]}

Ngoo, Y. J. ^{[1
]}

Singh, S. P. ^{[1
]}

Chor, E. F. ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119074, Singapore

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2014年 / 3卷 / 06期

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILMS; W/MM; XPS; GAN;

D O I：

10.1149/2.011406jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical characteristics of In0.18Al0.82N/GaN MOSHEMTs-on-Si (111) with Y2O3 gate dielectric of thickness between 5 to 30 nm are reported. A positive shift in threshold voltage, V-th, with respect to Schottky gate HEMTs is observed, which is in contrast to that for ZrO2 gate dielectric MOSHEMTs. An analytical V-th model is proposed to quantify the fixed oxide charges at the Y2O3/In0.18Al0.82N interface (n(ox,intf)) and in the Y2O3 bulk (n(ox,bulk)). The negative polarity of the fixed oxide charges (n(ox,intf), n(ox,bulk)) is believed to be the reason,for the abovementioned positive V-th shift. X-ray photoelectron spectroscopy analysis reveals that a thin interfacial layer (IL) may have formed as a result of spontaneous reaction between dielectric Y2O3 and In0.18Al0.82N/GaN heterostructure, leaving Y2O3 bulk on top for thick dielectric film. We believe n(ox,intf) is located in the IL and that its polarity and magnitude are related to the constituents of the IL, which comprise mainly YAlOxNy and its sub-oxynitrides. It is also observed that Y2O3 bulk has negative fixed charges (n(ox,bulk)) with a magnitude that depends on film densification upon thermal annealing treatment. (C) 2014 The Electrochemical Society. All rights reserved.

引用

页码：Q120 / Q126

页数：7

共 36 条

[1] MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs [J].

Abermann, S. ;

Pozzovivo, G. ;

Kuzmik, J. ;

Strasser, G. ;

Pogany, D. ;

Carlin, J-F ;

Grandjean, N. ;

Bertagnolli, E. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (12) :1272-1275

[2] Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm [J].

Adivarahan, V ;

Yang, J ;

Koudymov, A ;

Simin, G ;

Khan, MA .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (08) :535-537

[3] Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy [J].

Akazawa, M. ;

Gao, B. ;

Hashizume, T. ;

Hiroki, M. ;

Yamahata, S. ;

Shigekawa, N. .

JOURNAL OF APPLIED PHYSICS, 2011, 109 (01)

[4] Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy [J].

Akazawa, M. ;

Matsuyama, T. ;

Hashizume, T. ;

Hiroki, M. ;

Yamahata, S. ;

Shigekawa, N. .

APPLIED PHYSICS LETTERS, 2010, 96 (13)

[5] InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess [J].

Alomari, M. ;

Medjdoub, F. ;

Carlin, J. -F. ;

Feltin, E. ;

Grandjean, N. ;

Chuvilin, A. ;

Kaiser, U. ;

Gaquiere, C. ;

Kohn, E. .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (11) :1131-1133

[6] XPS STUDY OF THE INTERFACE REACTIONS BETWEEN BUFFER LAYERS FOR HTSC THIN-FILMS AND SILICON [J].

BEHNER, H ;

WECKER, J ;

MATTHEE, T ;

SAMWER, K .

SURFACE AND INTERFACE ANALYSIS, 1992, 18 (09) :685-690

[7] Thickness Dependent Electrical Characteristics of InAlN/GaN-on-Si MOSHEMTs with Y2O3 Gate Dielectric and Au-free Ohmic Contact [J].

Bera, M. K. ;

Liu, Y. ;

Kyaw, L. M. ;

Ngoo, Y. J. ;

Chor, E. F. .

WIDE-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 14, 2013, 53 (02) :65-74

[8] Electrical Properties of Yttrium-Titanium Oxide High- κ Gate Dielectric on Ge [J].

Bera, M. K. ;

Ahmet, P. ;

Kakushima, K. ;

Tsutsui, K. ;

Sugii, N. ;

Nishiyama, A. ;

Hattori, T. ;

Iwai, H. .

SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES, 2010, 33 (06) :275-284

[9] Yttrium-scandium oxide as high-k gate dielectric for germanium metal-oxide-semiconductor devices [J].

Bera, M. K. ;

Song, J. ;

Ahmet, P. ;

Kakushima, K. ;

Tsutsui, K. ;

Sugii, N. ;

Hattori, T. ;

Iwai, H. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 25 (06)

[10] Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics [J].

Cico, K. ;

Husekov, K. ;

Tapajna, M. ;

Gregusova, D. ;

Stoklas, R. ;

Kuzmik, J. ;

Carlin, J. -F. ;

Grandjean, N. ;

Pogany, D. ;

Froehlich, K. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (01)

← 1 2 3 4 →