Influence of rapid thermal annealing on mechanical stress in sputtered Si3N4 films

被引：0

作者：

Beshkov, G ^{[1
]}

Christova, K ^{[1
]}

Koprinarova, J ^{[1
]}

Dimitrova, Z ^{[1
]}

机构：

[1] BULGARIAN ACAD SCI,INST SOLID STATE PHYS,BU-1784 SOFIA,BULGARIA

来源：

HIGH TEMPERATURE AND MATERIALS SCIENCE | 1996年 / 36卷 / 2-3期

关键词：

silicon nitride; mechanical stress; compressive/tensile stress; annealing/thermal shock; sputtering parameters; transmission electron microscopy; amorphous structure; structural rearrangements;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Deposition of silicon nitride films on Si by rf sputtering of a silicon nitride target in argon has been investigated. Deposition parameters, such as sputtering power and gas pressure, have been studied in connection with film stress. The silicon nitride film stress data are interpreted in terms of structural and density changes, which influence the stress type during rapid thermal annealing (RTA). To our knowledge this influence on the mechanical stress in Si3N4 films has not been previously investigated.

引用

页码：87 / 92

页数：6