Infrared stealth property based on semiconductor (M)-to-metallic (R) phase transition characteristics of W-doped VO2 thin films coated on cotton fabrics

被引:95
作者
Mao, Zhiping [1 ]
Wang, Wei [1 ]
Liu, Ying [1 ]
Zhang, Linping [1 ]
Xu, Hong [1 ]
Zhong, Yi [1 ]
机构
[1] Donghua Univ, Minist Educ, Key Lab Sci & Technol Ecotext, Shanghai 201620, Peoples R China
关键词
W-doped VO2; Phase transformation; Thermochromic property; Infrared stealth fabric; INSULATOR-TRANSITION; OPTICAL-PROPERTIES; VANADIUM; OXIDES;
D O I
10.1016/j.tsf.2014.02.055
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The infrared stealth fabric was prepared using W-doped VO2 (M) paints by the coating technology. The thermochromic W-doped VO2 (M) was synthesized through hydrolysis method and two-step calcinations under N-2 atmosphere. The powders were evaluated by scanning electron microscopy, X-ray diffraction patterns and differential scanning calorimetry. The infrared emissivity of coated cotton fabric was measured by IR-2 Infrared Emissometer, which was as low as 0.752. The low infrared radiation intensity for coated cotton fabric was detected using the infrared imaging systems above the phase temperature of W-doped VO2 (M). The results indicated that the W-doped VO2 (M) thin films exhibited thermal infrared stealth performance, which could adapt to the surroundings spontaneously. (C) 2014 Elsevier B. V. All rights reserved.
引用
收藏
页码:208 / 214
页数:7
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