Structural, optical and DC conduction studies on vacuum evaporated Sr doped BaTiO3(BST) thin films prepared from Sr doped BaTiO3 nano particles
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作者:
Sengodan, R.
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机构:
Kumaraguru Coll Technol, Dept Phys, Coimbatore, Tamil Nadu, IndiaKumaraguru Coll Technol, Dept Phys, Coimbatore, Tamil Nadu, India
Sengodan, R.
[1
]
Shekar, B. Chandar
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机构:
Kongunadu Arts & Sci Coll, Dept Phys, Coimbatore, Tamil Nadu, IndiaKumaraguru Coll Technol, Dept Phys, Coimbatore, Tamil Nadu, India
Shekar, B. Chandar
[2
]
机构:
[1] Kumaraguru Coll Technol, Dept Phys, Coimbatore, Tamil Nadu, India
[2] Kongunadu Arts & Sci Coll, Dept Phys, Coimbatore, Tamil Nadu, India
来源:
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
|
2014年
/
16卷
/
5-6期
关键词:
Barium strontium titanate;
Thermal evaporation;
XRD;
UV;
-;
Visible;
DC Conduction and Poole - Frenkel;
SOL-GEL TECHNIQUE;
BARIUM-TITANATE;
ELECTRICAL-PROPERTIES;
DIELECTRIC-PROPERTIES;
PRECURSOR METHOD;
TEMPERATURE;
DEPOSITION;
MECHANISM;
(BA;
D O I:
暂无
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Barium titanate (BaTiO3) doped with Strontium (BST) nanoparticles prepared by using wet chemical method were thermally evaporated on to well cleaned glass substrates under the vacuum of 2 x 10(-5) torr, using 12A4 Hind Hivac coating unit. The structure, optical and electrical properties of the deposited BST thin films were studied using the X-ray diffraction (XRD), optical transmittance and current voltage measurements. The thickness of the film was measured by quartz crystal monitor. From X-ray analysis, it has been found that BaTiO3 nanoparticles possess tetragonal structure and the deposited films were polycrystalline in nature, whereas the crytstallinity increases with increase of thickness. The extinction coefficient of the BST thin films decreases and on the other hand, refractive index increases with increasing thickness. The optical band gap energy value decreases with increase of film thickness. In the DC conduction studies, the Current-Voltage characteristics of the films showed ohmic conduction in the low field region. The conduction mechanism was found to be Poole-Frenkel at high field region. The activation energy values were estimated and were found to be decreasing with increasing applied field. The zero field value of the activation energy was found to be 0.28 eV.
机构:
St Petersburg Electrotech Univ, Dept Microelect & Radio Engn, St Petersburg 197376, RussiaSt Petersburg Electrotech Univ, Dept Microelect & Radio Engn, St Petersburg 197376, Russia
Vendik, I
;
Vendik, O
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机构:St Petersburg Electrotech Univ, Dept Microelect & Radio Engn, St Petersburg 197376, Russia
Vendik, O
;
Pleskachev, V
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机构:St Petersburg Electrotech Univ, Dept Microelect & Radio Engn, St Petersburg 197376, Russia
Pleskachev, V
;
Nikol'ski, M
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机构:St Petersburg Electrotech Univ, Dept Microelect & Radio Engn, St Petersburg 197376, Russia
机构:Indian Inst Technol, Composites Technol Ctr, Madras 600036, Tamil Nadu, India
Vinothini, V
;
Singh, P
论文数: 0引用数: 0
h-index: 0
机构:Indian Inst Technol, Composites Technol Ctr, Madras 600036, Tamil Nadu, India
Singh, P
;
Balasubramanian, M
论文数: 0引用数: 0
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机构:
Indian Inst Technol, Composites Technol Ctr, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, Composites Technol Ctr, Madras 600036, Tamil Nadu, India
机构:
Tokyo Inst Technol, Grad Sch Sci & Engn, Dept Met & Ceram Sci, Meguro Ku, Tokyo 1528552, JapanTokyo Inst Technol, Grad Sch Sci & Engn, Dept Met & Ceram Sci, Meguro Ku, Tokyo 1528552, Japan
Wada, S
;
Narahara, M
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机构:
Tokyo Inst Technol, Grad Sch Sci & Engn, Dept Met & Ceram Sci, Meguro Ku, Tokyo 1528552, JapanTokyo Inst Technol, Grad Sch Sci & Engn, Dept Met & Ceram Sci, Meguro Ku, Tokyo 1528552, Japan
Narahara, M
;
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机构:
Hoshina, T
;
Kakemoto, H
论文数: 0引用数: 0
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机构:
Tokyo Inst Technol, Grad Sch Sci & Engn, Dept Met & Ceram Sci, Meguro Ku, Tokyo 1528552, JapanTokyo Inst Technol, Grad Sch Sci & Engn, Dept Met & Ceram Sci, Meguro Ku, Tokyo 1528552, Japan
机构:
St Petersburg Electrotech Univ, Dept Microelect & Radio Engn, St Petersburg 197376, RussiaSt Petersburg Electrotech Univ, Dept Microelect & Radio Engn, St Petersburg 197376, Russia
Vendik, I
;
Vendik, O
论文数: 0引用数: 0
h-index: 0
机构:St Petersburg Electrotech Univ, Dept Microelect & Radio Engn, St Petersburg 197376, Russia
Vendik, O
;
Pleskachev, V
论文数: 0引用数: 0
h-index: 0
机构:St Petersburg Electrotech Univ, Dept Microelect & Radio Engn, St Petersburg 197376, Russia
Pleskachev, V
;
Nikol'ski, M
论文数: 0引用数: 0
h-index: 0
机构:St Petersburg Electrotech Univ, Dept Microelect & Radio Engn, St Petersburg 197376, Russia
机构:Indian Inst Technol, Composites Technol Ctr, Madras 600036, Tamil Nadu, India
Vinothini, V
;
Singh, P
论文数: 0引用数: 0
h-index: 0
机构:Indian Inst Technol, Composites Technol Ctr, Madras 600036, Tamil Nadu, India
Singh, P
;
Balasubramanian, M
论文数: 0引用数: 0
h-index: 0
机构:
Indian Inst Technol, Composites Technol Ctr, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, Composites Technol Ctr, Madras 600036, Tamil Nadu, India
机构:
Tokyo Inst Technol, Grad Sch Sci & Engn, Dept Met & Ceram Sci, Meguro Ku, Tokyo 1528552, JapanTokyo Inst Technol, Grad Sch Sci & Engn, Dept Met & Ceram Sci, Meguro Ku, Tokyo 1528552, Japan
Wada, S
;
Narahara, M
论文数: 0引用数: 0
h-index: 0
机构:
Tokyo Inst Technol, Grad Sch Sci & Engn, Dept Met & Ceram Sci, Meguro Ku, Tokyo 1528552, JapanTokyo Inst Technol, Grad Sch Sci & Engn, Dept Met & Ceram Sci, Meguro Ku, Tokyo 1528552, Japan
Narahara, M
;
论文数: 引用数:
h-index:
机构:
Hoshina, T
;
Kakemoto, H
论文数: 0引用数: 0
h-index: 0
机构:
Tokyo Inst Technol, Grad Sch Sci & Engn, Dept Met & Ceram Sci, Meguro Ku, Tokyo 1528552, JapanTokyo Inst Technol, Grad Sch Sci & Engn, Dept Met & Ceram Sci, Meguro Ku, Tokyo 1528552, Japan